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CY7C147 - 4K x 1 STATIC RAM

Description

(WE) inputs are both LOW.

Data on the input pin (DI) is written into the memory location specified on the address pins (A 0 through A 11).

Readingthedeviceisaccomplished bytakĆ ingthechipenable(CE)LOWwhile(WE) remains HIGH.

Features

  • D D D D D D D Automatic powerĆdown when deseĆ lected CMOS for optimum speed/power High speed Capable of withstanding greater than 2001V electrostatic discharge Ċ 25 ns Low active power Ċ 440 mW (commercial) Ċ 605 mW (military) Low standby power Ċ 55 mW TTLĆcompatible inputs and outputs The CY7C147 is a highĆperformance CMOS static RAMs organized as 4096 words by 1 bit. Easy memory expansion is provided by an active LOW chip enable (CE) and threeĆstate drivers. The CY7C147 has an automatic.

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Full PDF Text Transcription

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7c147: 12/4/89 Revision: Thursday, November 11, 1993 www.DataSheet4U.com Features D D D D D D D Automatic powerĆdown when deseĆ lected CMOS for optimum speed/power High speed Capable of withstanding greater than 2001V electrostatic discharge Ċ 25 ns Low active power Ċ 440 mW (commercial) Ċ 605 mW (military) Low standby power Ċ 55 mW TTLĆcompatible inputs and outputs The CY7C147 is a highĆperformance CMOS static RAMs organized as 4096 words by 1 bit. Easy memory expansion is provided by an active LOW chip enable (CE) and threeĆstate drivers. The CY7C147 has an automatic powerĆdown feature, reducing the power consumption by 80% when deselected . Writingtothedeviceisaccomplishedwhen the chip select (CE) and write enable Functional Description (WE) inputs are both LOW.
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