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CY7C1373D Datasheet

Manufacturer: Cypress (now Infineon)
CY7C1373D datasheet preview

Datasheet Details

Part number CY7C1373D
Datasheet CY7C1373D_CypressSemiconductor.pdf
File Size 802.19 KB
Manufacturer Cypress (now Infineon)
Description 18-Mbit (512 K x 36/1 M x 18) Flow-Through SRAM
CY7C1373D page 2 CY7C1373D page 3

CY7C1373D Overview

CY7C1371D CY7C1373D 18-Mbit (512 K × 36/1 M × 18) Flow-Through SRAM with NoBL™ Architecture 18-Mbit (512 K × 36/1 M × 18) Flow-through SRAM with NoBL™.

CY7C1373D Key Features

  • No Bus Latency (NoBL) architecture eliminates dead cycles between write and read cycles
  • Supports up to 133-MHz bus operations with zero wait states
  • Data is transferred on every clock
  • Pin-patible and functionally equivalent to ZBT™ devices
  • Internally self-timed output buffer control to eliminate the need
  • Registered inputs for flow through operation
  • Byte write capability
  • 3.3 V/2.5 V I/O power supply (VDDQ)
  • Fast clock-to-output times
  • 6.5 ns (for 133-MHz device)

CY7C1373C from other manufacturers

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Brand Logo Part Number Description Other Manufacturers
Cypress Logo CY7C1373C 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBL Architecture Cypress
Cypress (now Infineon) logo - Manufacturer

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CY7C1370KV33 18-Mbit (512K x 36/1M x 18) Pipelined SRAM
CY7C1370KVE33 18-Mbit (512K x 36/1M x 18) Pipelined SRAM
CY7C1371B (CY7C1371B / CY7C1373B) 512K x 36/1M x 18 Flow-Thru SRAM
CY7C1371D 18-Mbit (512 K x 36/1 M x 18) Flow-Through SRAM

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