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CY62168GE - 16-Mbit (2M words x 8 bits) Static RAM

Download the CY62168GE datasheet PDF. This datasheet also covers the CY62168G variant, as both devices belong to the same 16-mbit (2m words x 8 bits) static ram family and are provided as variant models within a single manufacturer datasheet.

Description

CY62168G and CY62168GE are high-performance CMOS low-power (MoBL) SRAM devices with embedded ECC.

Both devices are offered in single and dual chip enable options and in multiple pin configurations.

Features

  • Ultra-low standby power.
  • Typical standby current: 5.5 A.
  • Maximum standby current: 16 A.
  • High speed: 45 ns/55 ns.
  • Embedded error-correcting code (ECC) for single-bit error correction.
  • Wide voltage range: 1.65 V to 2.2 V, 2.2 V to 3.6 V, 4.5 V to 5.5 V.
  • 1.0 V data retention.
  • Transistor-transistor logic (TTL) compatible inputs and outputs.
  • ERR pin to indicate 1-bit error detection and correction.
  • Available in Pb-free 48-ball VFBGA package Functio.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (CY62168G-CypressSemiconductor.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
CY62168G/CY62168GE MoBL® 16-Mbit (2M words × 8 bits) Static RAM with Error-Correcting Code (ECC) 16-Mbit (2M words × 8 bits) Static RAM with Error-Correcting Code (ECC) Features ■ Ultra-low standby power ❐ Typical standby current: 5.5 A ❐ Maximum standby current: 16 A ■ High speed: 45 ns/55 ns ■ Embedded error-correcting code (ECC) for single-bit error correction ■ Wide voltage range: 1.65 V to 2.2 V, 2.2 V to 3.6 V, 4.5 V to 5.5 V ■ 1.0 V data retention ■ Transistor-transistor logic (TTL) compatible inputs and outputs ■ ERR pin to indicate 1-bit error detection and correction ■ Available in Pb-free 48-ball VFBGA package Functional Description CY62168G and CY62168GE are high-performance CMOS low-power (MoBL) SRAM devices with embedded ECC.
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