CY62157H ram equivalent, 8-mbit (512k words x 16 bit) static ram.
* Ultra-low standby current
* Typical standby current: 5.5A
* Maximum standby current: 16 A
* High speed: 45 ns
* Voltage range: 2.2 V to 3.6 V
CY62157H is a high-performance CMOS low-power (MoBL) SRAM device with Embedded Error-Correcting Code. ECC logic can detect and correct single bit error in accessed location. This device is offered in dual chip enable option. Dual chip enable devices .
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