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CY62157DV30 - 8-Mbit (512K x 16) MoBL Static RAM

General Description

The CY62157DV30 is a high-performance CMOS static RAM organized as 512K words by 16 bits.

Key Features

  • Temperature ranges.
  • Industrial:.
  • 40 °C to 85 °C.
  • Very high speed: 55 ns.
  • Wide voltage range: 2.20 V.
  • 3.60 V.
  • Pin-compatible with CY62157CV25, CY62157CV30, and CY62157CV33.
  • Ultra-low active power.
  • Typical active current: 1.5 mA @ f = 1 MHz.
  • Typical active current: 12 mA @ f = fmax.
  • Ultra-low standby power.
  • Easy memory expansion with CE1, CE2, and OE features.
  • Automatic power-down when deselected.
  • Complementary metal oxide.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CY62157DV30 MoBL® 8-Mbit (512K x 16) MoBL Static RAM Features ■ Temperature ranges ❐ Industrial: –40 °C to 85 °C ■ Very high speed: 55 ns ■ Wide voltage range: 2.20 V–3.60 V ■ Pin-compatible with CY62157CV25, CY62157CV30, and CY62157CV33 ■ Ultra-low active power ❐ Typical active current: 1.5 mA @ f = 1 MHz ❐ Typical active current: 12 mA @ f = fmax ■ Ultra-low standby power ■ Easy memory expansion with CE1, CE2, and OE features ■ Automatic power-down when deselected ■ Complementary metal oxide semiconductor (CMOS) for optimum speed/power ■ Available in Pb-free and non Pb-free 48-ball fine ball grid array (FBGA), and Pb-free 44-pin thin small outline package (TSOPII) package Functional Description The CY62157DV30 is a high-performance CMOS static RAM organized as 512K words by 16 bits.