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CY62157CV33 - 512K x 16 Static RAM

Description

of read and write modes.

The CY62157CV25/30/33 are available in a 48-ball FBGA package.

The CY62157CV25/30/33 are high-performance CMOS static RAMs organized as 512K words by 16 bits.

Features

  • High speed.
  • 55 ns and 70 ns availability.
  • Voltage range:.
  • CY62157CV25: 2.2V.
  • 2.7V.
  • CY62157CV30: 2.7V.
  • 3.3V.
  • CY62157CV33: 3.0V.
  • 3.6V.
  • Ultra-low active power.
  • Typical active current: 1.5 mA @ f = 1 MHz.
  • Typical active current: 5.5 mA @ f = fmax (70 ns speed) Low standby power Easy memory expansion with CE1, CE2 and OE features Automatic power-down when dese.

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Other Datasheets by Cypress (Infineon)

Part Number Description
CY62157CV30 512K x 16 Static RAM
CY62157CV25 512K x 16 Static RAM
CY62157DV18 8M (512K x 16) Static RAM
CY62157DV20 8M (512K x 16) Static RAM
CY62157DV30 8-Mbit (512K x 16) MoBL Static RAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CY62157CV25/30/33 MoBL™ 512K x 16 Static RAM Features • High speed — 55 ns and 70 ns availability • Voltage range: — CY62157CV25: 2.2V–2.7V — CY62157CV30: 2.7V–3.3V — CY62157CV33: 3.0V–3.6V • Ultra-low active power — Typical active current: 1.5 mA @ f = 1 MHz • • • • — Typical active current: 5.5 mA @ f = fmax (70 ns speed) Low standby power Easy memory expansion with CE1, CE2 and OE features Automatic power-down when deselected CMOS for optimum speed/power reducing power consumption by more than 99% when deselected (CE1 HIGH or CE2 LOW or both BLE and BHE are HIGH).
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