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CY62157DV20 - 8M (512K x 16) Static RAM

Description

The CY62157DV20 is a high-performance CMOS static RAM organized as 512K words by 16 bits.

Features

  • Very high speed: 55 ns.
  • Wide voltage range: 1.65V to 2.2V.
  • Pin compatible with CY62157CV18.
  • Ultra low active power.
  • Typical active current: 1 mA @ f = 1 MHz.
  • Typical active current: 10 mA @ f = fmax.
  • Ultra low standby power.
  • Easy memory expansion with CE1, CE2 and OE features.
  • Automatic power-down when deselected.
  • CMOS for optimum speed/power.
  • Packages offered in a 48-ball FBGA Functional Descript.

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Other Datasheets by Cypress (Infineon)

Part Number Description
CY62157DV18 8M (512K x 16) Static RAM
CY62157DV30 8-Mbit (512K x 16) MoBL Static RAM
CY62157CV25 512K x 16 Static RAM
CY62157CV30 512K x 16 Static RAM
CY62157CV33 512K x 16 Static RAM

Full PDF Text Transcription

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CY62157DV20 MoBL2 Features • Very high speed: 55 ns • Wide voltage range: 1.65V to 2.2V • Pin compatible with CY62157CV18 • Ultra low active power — Typical active current: 1 mA @ f = 1 MHz — Typical active current: 10 mA @ f = fmax • Ultra low standby power • Easy memory expansion with CE1, CE2 and OE features • Automatic power-down when deselected • CMOS for optimum speed/power • Packages offered in a 48-ball FBGA Functional Description[1] The CY62157DV20 is a high-performance CMOS static RAM organized as 512K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life (MoBL) in portable applications such as cellular telephones.
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