Datasheet4U Logo Datasheet4U.com

CY15B128J - 128-Kbit (16K x 8) Automotive Serial (I2C) F-RAM

Description

The CY15B128J is a 128-Kbit nonvolatile memory employing an advanced ferroelectric process.

An F-RAM is nonvolatile and performs reads and writes similar to a RAM.

Features

  • 128-Kbit ferroelectric random access memory (F-RAM) logically organized as 16K × 8.
  • High-endurance 100 trillion (1014) read/writes.
  • 151-year data retention (See the Data Retention and Endurance table).
  • NoDelay™ writes.
  • Advanced high-reliability ferroelectric process.
  • Fast two-wire serial interface (I2C).
  • Up to 3.4-MHz frequency[1].
  • Direct hardware replacement for serial EEPROM.
  • Supports legacy timings for 100 kHz and 400 kHz.
  • Device ID.
  • Man.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
CY15B128Q 128-Kbit (16K x 8) Automotive Serial (SPI) F-RAM Cypress Semiconductor
CY15B101N 1-Mbit (64K x 16) Automotive F-RAM Memory Cypress Semiconductor
CY15B102N 2-Mbit (128K x 16) Automotive F-RAM Memory Cypress Semiconductor
CY15B102Q 2-Mbit (256 K x 8) Serial (SPI) Automotive F-RAM Cypress Semiconductor
CY15B102QN Auto Ferroelectric RAM Infineon

Other Datasheets by Cypress (Infineon)

Part Number Description
CY15B256Q 256-Kbit (32K x 8) Automotive Serial (SPI) F-RAM
CY14MB256J 256-Kbit (32 K × 8) Serial (I2C) nvSRAM
CY14MC256J 256-Kbit (32 K × 8) Serial (I2C) nvSRAM
CY14ME064Q 64-Kbit (8 K x 8) SPI nvSRAM
CY14ME256J 256-Kbit (32 K × 8) Serial (I2C) nvSRAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
CY15B128J 128-Kbit (16K × 8) Automotive Serial (I2C) F-RAM 128-Kbit (16K × 8) Automotive Serial (I2C) F-RAM Features ■ 128-Kbit ferroelectric random access memory (F-RAM) logically organized as 16K × 8 ❐ High-endurance 100 trillion (1014) read/writes ❐ 151-year data retention (See the Data Retention and Endurance table) ❐ NoDelay™ writes ❐ Advanced high-reliability ferroelectric process ■ Fast two-wire serial interface (I2C) ❐ Up to 3.4-MHz frequency[1] ❐ Direct hardware replacement for serial EEPROM ❐ Supports legacy timings for 100 kHz and 400 kHz ■ Device ID ❐ Manufacturer ID and Product ID ■ Low power consumption ❐ 175-A active current at 100 kHz ❐ 150-A standby current ❐ 8-A sleep mode current ■ Low-voltage operation: VDD = 2.0 V to 3.
Published: |