* 128-Kbit ferroelectric random access memory (F-RAM) logically organized as 16K × 8
* High-endurance 100 trillion (1014) read/writes
* 151-year data retentio.

requiring frequent or rapid writes. Examples range from data logging, where the number of write cycles may be critical,.

The CY15B128J is a 128-Kbit nonvolatile memory employing an advanced ferroelectric process. An F-RAM is nonvolatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, .

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts