PE8270M mosfet equivalent, n-channel power mosfet.
* VDS = 18V, ID = 90A RDS(ON) < 4.2mΩ @ VGS=4.5V
RDS(ON) < 4.5mΩ @ VGS=3.8V
RDS(ON) < 6.5mΩ @ VGS=2.5V
Schematic diagram
* High Power and current handing capabi.
General Features
* VDS = 18V, ID = 90A RDS(ON) < 4.2mΩ @ VGS=4.5V
RDS(ON) < 4.5mΩ @ VGS=3.8V
RDS(ON) < 6.5mΩ @ VGS.
The PE8270M uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.
General Features
* VDS = 18V, ID = 90A RDS(ON) < 4.2mΩ @ VGS=4.5V
RDS(ON) < 4.5mΩ @ VGS=3.8V
RDS(ON) .
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