PE6986E mosfet equivalent, n-channel power mosfet.
* VDS = 18V, ID = 6.5A
RDS(ON) < 15mΩ @ VGS=4.5V RDS(ON) < 16mΩ @ VGS=3.8V RDS(ON) < 20mΩ @ VGS=2.5V ESD Rating: 4000V HBM
Schematic diagram
* High Power and cu.
It is ESD protected.
PE6986E
General Features
* VDS = 18V, ID = 6.5A
RDS(ON) < 15mΩ @ VGS=4.5V RDS(ON) < 16mΩ @ V.
The PE6986E uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. It is ESD protected.
PE6986E
General Features
* VDS = 18V, ID = 6.5A
RDS(ON) < 15mΩ @ VGS=4.5V RDS(O.
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