CMT2N7002K mosfet equivalent, small signal mosfet.
High Density Cell Design for Low RDS(ON) Voltage Controlled Small Signal Switch Rugged and Reliable High Saturation Current Capability ESD Protected 2KV HBM
PI.
requiring up to 115mA DC and can deliver pulsed currents up to 800mA. This product is particularly suited for low voltag.
This N-Channel enhancement mode field effect transistor is produced using high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching and ESD enhanced perfor.
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