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CMT2N7002E SMALL SIGNAL MOSFET

CMT2N7002E Description

CMT2N7002E SMALL SIGNAL MOSFET GENERAL .
FEATURES This N-Channel enhancement mode field effect transistor is produced using high cell density, DMOS technology.

CMT2N7002E Features

* This N-Channel enhancement mode field effect transistor is produced using high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. This product is particularly suited for low voltage, low cu

CMT2N7002E Applications

* such as small servo motor control, power MOSFET gate drivers, and other switching applications. Low On-Resistance: 3Ω Low Threshold: 2V (typ. ) Low Input Capacitance: 25pF Fast Switching Speed: 7.5ns Low Input and Output Leakage PIN CONFIGURATION SOT-23 Top View 3 SYMBOL D GATE DRAIN SOURCE 1 2

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Datasheet Details

Part number
CMT2N7002E
Manufacturer
Champion
File Size
201.29 KB
Datasheet
CMT2N7002E-Champion.pdf
Description
SMALL SIGNAL MOSFET

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SMALL SIGNAL MOSFET Champion
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