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CMT2N7002E - SMALL SIGNAL MOSFET

Datasheet Summary

Features

  • This N-Channel enhancement mode field effect transistor is produced using high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. This product is particularly suited for low voltage, low current.

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Datasheet Details

Part number CMT2N7002E
Manufacturer Champion
File Size 201.29 KB
Description SMALL SIGNAL MOSFET
Datasheet download datasheet CMT2N7002E Datasheet
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CMT2N7002E SMALL SIGNAL MOSFET GENERAL DESCRIPTION FEATURES This N-Channel enhancement mode field effect transistor is produced using high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. This product is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. Low On-Resistance: 3Ω Low Threshold: 2V (typ.) Low Input Capacitance: 25pF Fast Switching Speed: 7.
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