High Density Cell Design for Low RDS(ON) Voltage Controlled Small Signal Switch Rugged and Reliable High Saturation Current Capability Built-in G-S Protection Diode PIN .

requiring up to 115mA DC and can deliver pulsed currents up to 800mA. This product is particularly suited for low voltag.

This N-Channel enhancement mode field effect transistor is produced using high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. It can be .

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts