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CZT5551E Datasheet, Central Semiconductor

CZT5551E transistor equivalent, surface mount npn silicon transistor.

CZT5551E Avg. rating / M : 1.0 rating-11

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CZT5551E Datasheet

Features and benefits


* High Collector Breakdown Voltage 250V
* Low Leakage Current 50nA MAX
* Low Saturation Voltage 100mV MAX @ 50mA
* Complementary Device: CZT5401E
* S.

Application

requiring high breakdown voltage. MARKING: FULL PART NUMBER SOT-223 CASE APPLICATIONS:
* General purpose switching .

Description

The CENTRAL SEMICONDUCTOR CZT5551E is an NPN Silicon Transistor, packaged in an SOT-223 case, designed for general purpose amplifier applications requiring high breakdown voltage. MARKING: FULL PART NUMBER SOT-223 CASE APPLICATIONS:
* General p.

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TAGS

CZT5551E
SURFACE
MOUNT
NPN
SILICON
TRANSISTOR
CZT5551
CZT5551-C
CZT5551HC
Central Semiconductor

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