CZT5551E transistor equivalent, surface mount npn silicon transistor.
* High Collector Breakdown Voltage 250V
* Low Leakage Current 50nA MAX
* Low Saturation Voltage 100mV MAX @ 50mA
* Complementary Device: CZT5401E
* S.
requiring high breakdown voltage.
MARKING: FULL PART NUMBER
SOT-223 CASE
APPLICATIONS:
* General purpose switching .
The CENTRAL SEMICONDUCTOR CZT5551E is an NPN Silicon Transistor, packaged in an SOT-223 case, designed for general purpose amplifier applications requiring high breakdown voltage.
MARKING: FULL PART NUMBER
SOT-223 CASE
APPLICATIONS:
* General p.
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