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CZT5551-C Datasheet Preview

CZT5551-C Datasheet

NPN Silicon Medium Power Transistor

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Elektronische Bauelemente
CZT5551-C
0.6A, 180V
NPN Silicon Medium Power Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
High Voltage Amplifier Application
High Voltage
MARKING
ZT5551
PACKAGE INFORMATION
Package
MPQ
SOT-223
2.5K
Leader Size
13 inch
ORDER INFORMATION
Part Number
Type
CZT5551-C Lead (Pb)-free and Halogen-free
SOT-223
A
M
Top View C B
KL
E
1
2
3
D
F GH
4
J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
5.90 6.70
6.70 7.30
3.30 3.80
1.42 1.90
4.45 4.75
0.60 0.85
REF.
G
H
J
K
L
M
Millimeter
Min. Max.
- 0.18
2.00 REF.
0.20 0.40
1.10 REF.
2.30 REF.
2.80 3.20
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Collector Current-Continuous
IC
Collector Power Dissipation
PD
Thermal Resistance from Junction to Ambient
RθJA
Junction and Storage Temperature
TJ, TSTG
Ratings
180
160
6
600
1
125
150, -55~150
Unit
V
V
V
mA
W
°C/W
°C
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max.
Collector-Base Breakdown Voltage
V(BR)CBO
180
-
-
Collector-Emitter Breakdown Voltage V(BR)CEO
160
-
-
Emitter-Base Breakdown Voltage
V(BR)EBO
6
-
-
Collector Cut-Off Current
ICBO
-
- 50
Emitter Cut-Off Current
IEBO - - 50
hFE1
80
-
-
DC Current Gain
hFE2
80
- 250
hFE3
30
-
-
Collector-Emitter Saturation Voltage
VCE(sat)1
VCE(sat)2
-
-
- 0.15
- 0.2
VBE(sat)1
-
-
1
Base-Emitter Saturation Voltage
VBE(sat)2
-
-
1
Transition Frequency
fT 100 - 300
Collector Capacitance
Cob - 6 -
Emitter Capacitance
Cib - 20 -
http://www.SeCoSGmbH.com/
18-Oct-2017 Rev. E
Unit
Test Conditions
V
V
V
nA
nA
V
V
MHz
pF
pF
IC=100µA, IE=0
IC=1mA, IB=0
IC=0, IE=10µA
VCB=120V, IE=0
VEB=4V, IC=0
VCE=5V, IC=1mA
VCE=5V, IC=10mA
VCE=5V, IC=50mA
IC=10mA, IB=1mA
IC=50mA, IB=5mA
IC=10mA, IB=1mA
IC=50mA, IB=5mA
VCE=10V, IC=10mA, f=100MHz
VCB=10V, IE=0, f=1MHz
VCB=0.5V, IC=0, f=1MHz
Any changes of specification will not be informed individually.
Page 1 of 2




SeCoS

CZT5551-C Datasheet Preview

CZT5551-C Datasheet

NPN Silicon Medium Power Transistor

No Preview Available !

Elektronische Bauelemente
CHARACTERISTIC CURVES
CZT5551-C
0.6A, 180V
NPN Silicon Medium Power Transistor
http://www.SeCoSGmbH.com/
18-Oct-2017 Rev. E
Any changes of specification will not be informed individually.
Page 2 of 2


Part Number CZT5551-C
Description NPN Silicon Medium Power Transistor
Maker SeCoS
Total Page 2 Pages
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