Datasheet4U Logo Datasheet4U.com

CZT5401 - PNP Silicon Transistor

Key Features

  • SOT-223 6.50+0.2 -0.2 Unit: mm 3.50+0.2 -0.2 3.00+0.1 -0.1 4 0.90+0.2 -0.2 7.00+0.3 -0.3 123 2.9 4.6 0.70+0.1 -0.1 1 Base 2 Collector 3 Emitter 4 Collector Absolute Maximum Ratings Ta = 25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance Electrical Characteristics Ta = 25 Symbol ICBO ICBO IEBO BVCBO BVCEO BVEBO VCE(SAT) VCE(SAT) VBE(SAT) VBE(SAT) hFE fT Cob h.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
CZT5401 PNP Transistor Central Semiconductor Corp
CZT5401 PNP Transistor WEJ
CZT5401 PNP Transistor SeCoS
CZT5401E SURFACE MOUNT PNP SILICON TRANSISTOR Central Semiconductor
CZT5338 NPN SILICON POWER TRANSISTOR Central Semiconductor Corp

Other Datasheets by Kexin Semiconductor

Part Number Description
CZT127 Surface Mount PNP Silicon Power Darlington Transistor
CZT2000 PNP Silicon Extremely High Voltage Darlington Transistor
CZT2955 PNP Silicon Power Transistor
CZT3055 NPN Silicon Power Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SMD Type Transistors PNP Silicon Transistor CZT5401 0.1max +0.050.90 -0.05 +0.151.65 -0.15 Features SOT-223 6.50+0.2 -0.2 Unit: mm 3.50+0.2 -0.2 3.00+0.1 -0.1 4 0.90+0.2 -0.2 7.00+0.3 -0.3 123 2.9 4.6 0.70+0.1 -0.1 1 Base 2 Collector 3 Emitter 4 Collector Absolute Maximum Ratings Ta = 25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance Electrical Characteristics Ta = 25 Symbol ICBO ICBO IEBO BVCBO BVCEO BVEBO VCE(SAT) VCE(SAT) VBE(SAT) VBE(SAT) hFE fT Cob hfe NF Testconditons VCB=100V VCB=100V, TA=150 VEB=3.0V IC=100ìA IC=1.0mA IE=10ìA IC=10mA, IB=1.0mA IC=50mA, IB=5.0mA IC=10mA, IB=1.0mA IC=50mA, IB=5.0mA VCE=5.0V, IC=1.0mA VCE=5.