| Description | CYStech Electronics Corp. Spec. No. : C056H8 Issued Date : 2016.08.29 Revised Date : Page No. : 1/10 N-Channel Enhancement Mode Power MOSFET MTB013N10RH8 BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C Features RDSON(TYP) VGS=10V, ID=15A VGS=4.5V, ID=10A • Single Drive Requirement • Low On-resistance • Fast Switching Characteristic • Repetitive Avalanche Rated • Pb-free lead plating and Haloge... |
| Features |
RDSON(TYP)
VGS=10V, ID=15A VGS=4.5V, ID=10A
• Single Drive Requirement • Low On-resistance • Fast Switching Characteristic • Repetitive Avalanche Rated • Pb-free lead plating and Halogen-free package 100V 42A 14.3A 9.8mΩ 11.1mΩ Symbol MTB013N10RH8 G：Gate D：Drain S：Source Outline Pin 1 S S S G DFN5×6 D D D D G S S S D D D D Pin 1 Ordering... |
| Datasheet |
 MTB013N10RH8 Datasheet - 572.17KB |
