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MTB010N06RH8 - N-Channel Enhancement Mode Power MOSFET

Key Features

  • VGS=10V, ID=20A RDSON(TYP) VGS=4.5V, ID=20A.
  • Simple Drive Requirement.
  • Low On-resistance.
  • Fast Switching Characteristic.
  • Pb-free lead plating and Halogen-free package 60V 38A 10A 10mΩ 15.6mΩ Symbol MTB010N06RH8 G：Gate D：Drain S：Source Outline Pin 1 S S S G DFN5×6 D D D D G S S S D D D D Pin 1 Ordering Information Device MTB010N06RH8-0-T6-G Package DFN 5 ×6 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / tape & reel Environment friendly grade.

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Datasheet Details

Part number MTB010N06RH8
Manufacturer CYStech
File Size 863.28 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTB010N06RH8 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Spec. No. : C016H8 Issued Date : 2019.04.08 Revised Date : Page No. : 1/10 N-Channel Enhancement Mode Power MOSFET MTB010N06RH8 BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C Features VGS=10V, ID=20A RDSON(TYP) VGS=4.5V, ID=20A  Simple Drive Requirement  Low On-resistance  Fast Switching Characteristic  Pb-free lead plating and Halogen-free package 60V 38A 10A 10mΩ 15.