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MTB010A03H8 - Dual N-Channel Enhancement Mode Power MOSFET

Features

  • Low On Resistance.
  • Simple Drive Requirement.
  • Low Gate Charge.
  • Fast Switching Characteristic.
  • Pb-free lead plating and Halogen-free package BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TC=100°C ID@VGS=10V, TA=25°C ID@VGS=10V, TA=70°C RDS(ON)@VGS=10V, ID=12A RDS(ON)@VGS=4.5V, ID=7A 30V 36A 23A 8.8A 7.0A 7.3mΩ(typ) 9.6mΩ(typ) Equivalent Circuit MTB010A03H8 Outline Pin 1 DFN5×6 Pin 1 G：Gate D：Drain S：Source Ordering Information Device MTB010A03H8-0-T6-G Package DFN 5 ×6 (P.

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Datasheet Details

Part number MTB010A03H8
Manufacturer CYStech
File Size 852.44 KB
Description Dual N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTB010A03H8 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Spec. No. : C430H8 Issued Date : 2018.07.24 Revised Date : 2018.07.25 Page No. : 1/ 10 Dual N-Channel Enhancement Mode Power MOSFET MTB010A03H8 Features  Low On Resistance  Simple Drive Requirement  Low Gate Charge  Fast Switching Characteristic  Pb-free lead plating and Halogen-free package BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TC=100°C ID@VGS=10V, TA=25°C ID@VGS=10V, TA=70°C RDS(ON)@VGS=10V, ID=12A RDS(ON)@VGS=4.5V, ID=7A 30V 36A 23A 8.8A 7.0A 7.3mΩ(typ) 9.
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