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BTC2883J3 - General Purpose NPN Epitaxial Planar Transistor

Key Features

  • High breakdown voltage, BVCEO≥ 240V.
  • Large continuous collector current capability.
  • Low collector saturation voltage.
  • Pb-free lead plating and halogen-free package Symbol BTC2883J3 Outline TO-252(DPAK) B：Base C：Collector E：Emitter B CE Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Power Dissipation @TA=25℃ Power Dissipation @TC=25℃ Junction Temperature St.

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Datasheet Details

Part number BTC2883J3
Manufacturer CYStech
File Size 244.58 KB
Description General Purpose NPN Epitaxial Planar Transistor
Datasheet download datasheet BTC2883J3 Datasheet

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CYStech Electronics Corp. General Purpose NPN Epitaxial Planar Transistor BTC2883J3 BVCEO IC RCESAT(MAX) Spec. No. : C239J3 Issued Date : 2010.06.23 Revised Date : 2011.03.08 Page No. : 1/6 240V 1.2A 0.6Ω Features • High breakdown voltage, BVCEO≥ 240V • Large continuous collector current capability • Low collector saturation voltage • Pb-free lead plating and halogen-free package Symbol BTC2883J3 Outline TO-252(DPAK) B：Base C：Collector E：Emitter B CE Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Power Dissipation @TA=25℃ Power Dissipation @TC=25℃ Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC IB PD Tj Tstg Limits 300 240 7 1.