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BTC2880M3G - General Purpose NPN Epitaxial Planar Transistor

Key Features

  • High breakdown voltage, BVCEO≥ 120V.
  • Large continuous collector current capability.
  • Low collector saturation voltage.
  • RoHS compliant and Halogen-free package Symbol BTC2880M3G Outline SOT-89 B：Base C：Collector E：Emitter BCE Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Symbol VCBO VCEO VEBO IC IB Power Dissipation Pd Junction Temperature Tj Storage T.

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Datasheet Details

Part number BTC2880M3G
Manufacturer CYStech
File Size 130.84 KB
Description General Purpose NPN Epitaxial Planar Transistor
Datasheet download datasheet BTC2880M3G Datasheet

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Full PDF Text Transcription (Reference)

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CYStech Electronics Corp. General Purpose NPN Epitaxial Planar Transistor BTC2880M3G Spec. No. : C319M3G Issued Date : 2007.05.31 Revised Date : 2008.12.22 Page No. : 1/5 Features • High breakdown voltage, BVCEO≥ 120V • Large continuous collector current capability • Low collector saturation voltage • RoHS compliant and Halogen-free package Symbol BTC2880M3G Outline SOT-89 B：Base C：Collector E：Emitter BCE Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Symbol VCBO VCEO VEBO IC IB Power Dissipation Pd Junction Temperature Tj Storage Temperature Tstg Note : 1. When mounted on FR-4 PCB with area measuring 10×10×1 mm 2 .