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BTC2880M3 - General Purpose NPN Epitaxial Planar Transistor

Key Features

  • High breakdown voltage, BVCEO≥ 120V.
  • Large continuous collector current capability.
  • Low collector saturation voltage.
  • Pb-free lead plating and halogen-free package.
  • Weight : approx. 48.34 mg Symbol BTC2880M3 Outline SOT-89 B：Base C：Collector E：Emitter BCE Ordering Information Device BTC2880M3-X-T2-G Package SOT-89 (Pb-free lead plating and halogen-free package) Shipping 1000 pcs / Tape & Reel Environment friendly grade : S for RoHS complian.

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Datasheet Details

Part number BTC2880M3
Manufacturer CYStech
File Size 226.36 KB
Description General Purpose NPN Epitaxial Planar Transistor
Datasheet download datasheet BTC2880M3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. General Purpose NPN Epitaxial Planar Transistor BTC2880M3 Spec. No. : C319M3 Issued Date : 2007.05.31 Revised Date : 2017.02.16 Page No. : 1/6 Features • High breakdown voltage, BVCEO≥ 120V • Large continuous collector current capability • Low collector saturation voltage • Pb-free lead plating and halogen-free package • Weight : approx. 48.