CTL0404NS-R3 datasheet, mosfet equivalent, CT Micro

Features and benefits

* Drain-Source Breakdown Voltage VDSS 40 V
* Drain-Source On-Resistance RDS(ON) 32mΩ, at VGS= 10V, ID= 4.0A RDS(ON) 50mΩ, at VGS= 4.5V, ID= 3.0A ℃
* Continuous.

Application

* Power Management
* Portable Equipment
* DC/DC Converter
* Load Switch Package Outline Schematic Drai.

Description

The CTL0404NS-R3 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. Applications
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