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HGP022N04A-G - Silicon N-Channel Power MOSFET

Description

HGP022N04A-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.

Features

  • l Fast Switching l Low ON Resistance(Rdson≤2.2mΩ) l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test l Halogen Free.

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Datasheet Details

Part number HGP022N04A-G
Manufacturer CR Micro
File Size 474.59 KB
Description Silicon N-Channel Power MOSFET
Datasheet download datasheet HGP022N04A-G Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Silicon N-Channel Power MOSFET ○R HGP022N04A-G General Description： HGP022N04A-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This device is VDSS ID (Silicon Limited) ID(Package Limited) PD RDS(ON)Typ suitable for use as a load switch and PWM applications. The package form is TO-220AB, which accords with the RoHS standard. Features： l Fast Switching l Low ON Resistance(Rdson≤2.2mΩ) l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test l Halogen Free Applications： Power switch circuit of adaptor and charger. 40 V 200 A 120 A 150.6 W 1.
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