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CS7N03AE-1 - Silicon N-Channel Power MOSFET

Description

performance and enhance the avalanche energy.

suitable for use as a load switch and PWM applications.

Features

  • Fast Switching.
  • Low ON Resistance(Rdson≤20 mΩ).
  • Low Gate Charge.
  • Low Reverse transfer capacitances.
  • 100% Single Pulse avalanche energy Test.

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Datasheet Details

Part number CS7N03AE-1
Manufacturer CR Micro
File Size 801.15 KB
Description Silicon N-Channel Power MOSFET
Datasheet download datasheet CS7N03AE-1 Datasheet

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Full PDF Text Transcription

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Silicon N-Channel Power MOSFET ○R CS7N03 AE-1 General Description： CS7N03 AE-1, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching VDSS ID PD RDS(ON)Typ performance and enhance the avalanche energy. This device is suitable for use as a load switch and PWM applications. The package form is SOP-8, which accords with the RoHS standard. Features：  Fast Switching  Low ON Resistance(Rdson≤20 mΩ)  Low Gate Charge  Low Reverse transfer capacitances  100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger.
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