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Silicon N-Channel Power MOSFET
○R
CS70N30 AKR-G
General Description：
VDSS
300
CS70N30 AKR-G, the silicon N-channel Enhanced ID
70
VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃)
250
which reduce the conduction loss, improve switching
RDS(ON)Typ
36
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is TO-247,
which accords with the RoHS standard..
Features：
l Fast Switching
l Low ON Resistance(Rdson≤42mΩ) l Low Gate Charge (Typical Data: 136.2nC) l Low Reverse transfer capacitances(Typical: 107pF) l 100% Single Pulse avalanche energy Test l Halogen Free
Applications：
Power switch circuit of electron ballast and adaptor.
CS70N30AKR-G Datasheet
