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Silicon N-Channel Power MOSFET
○R
CS14N25 A8R
General Description：
CS14N25 A8R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching
VDSS ID PD(TC=25℃) RDS(ON)Typ
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is
TO-220AB, which accords with the RoHS standard.
Features：
Fast Switching
Low ON Resistance(Rdson≤0.25Ω)
Low Gate Charge (Typical Data:22.7nC)
Low Reverse transfer capacitances(Typical:13pF)
100% Single Pulse avalanche energy Test
Applications：
Power switch circuit of adaptor and charger.
250
V
14
A
100
W
0.
CS14N25A8R Datasheet
