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Silicon N-Channel Power MOSFET
○R
CS140N08 A0
General Description：
CS140N08 A0, the silicon N-channel Enhanced VDMOSFETs, is obtained by advanced Trench Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-263, which accords with the RoHS standard.
Features：
VDSS ID（Silicon limited current） PD(TC=25℃) RDS(ON)Typ
85 V 140 A 208 W 4.8 mΩ
l Fast Switching l Low ON Resistance(Rdson≤6mΩ) l Low Gate Charge (Typical Data:87.5nC) l Low Reverse transfer capacitances(Typical:291pF) l 100% Single Pulse avalanche energy Test
Applications：
Power switch circuit of adaptor and charger.
CS140N08A0 Datasheet
