Click to expand full text
Silicon N-Channel Power MOSFET
○R
CS140N08 AR
General Description：
CS140N08 AR, the silicon N-channel Enhanced VDMOSFETs, is obtained by advanced Trench Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor
VDSS ID（Silicon limited current） ID（Package limited current） PD(TC=25℃) RDS(ON)Typ
85 140 120 208 4.8
V A A W mΩ
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is TO-262,
which accords with the RoHS standard.
Features：
l Fast Switching
l Low ON Resistance(Rdson≤6mΩ) l Low Gate Charge (Typical Data:87.
CS140N08AR Datasheet
