CSD60N70 datasheet, mosfet equivalent, CASS

Avg. rating / M : 1.0 rating-1

datasheet Download (Size : 570.04KB)

Features and benefits

* VDS=60V；ID=56A@ VGS=10V； RDS(ON)<9.0mΩ @ VGS=10V
* Ultra Low On-Resistance
* High UIS and UIS 100% Test Application
* Hard Switched and High Frequency C.

Application

Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching applications. Features
* VDS=60V；ID.

Description

The CSD60N70 is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching applications. Features
* VDS=60V；ID=56A@ VGS=10V； RDS(ON)<9.0m.

Image gallery