CSD60N53 mosfet equivalent, n-channel trench power mosfet.
* VDS=60V; ID=88A RDS(ON)<6.6mΩ @ VGS=10V
* Ultra Low On-Resistance
* High UIS and UIS 100% Test
Application
* Power switching application
* load swit.
Features
* VDS=60V; ID=88A RDS(ON)<6.6mΩ @ VGS=10V
* Ultra Low On-Resistance
* High UIS and UIS 100% Test
A.
The CSD60N53 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). Those devices are suitable for use in PWM, load switching and general purpose applications.
Features
* VDS=60V; ID=88A RDS(ON).
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