CSD60N100 mosfet equivalent, n-channel trench power mosfet.
* VDS=60V; ID=45A RDS(ON)<15mΩ @ VGS=10V
* Ultra Low On-Resistance
* High UIS and UIS 100% Test
Application
* Power switching application
* load switc.
Features
* VDS=60V; ID=45A RDS(ON)<15mΩ @ VGS=10V
* Ultra Low On-Resistance
* High UIS and UIS 100% Test
Ap.
The CSD60N100 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). Those devices are suitable for use in PWM, load switching and general purpose applications.
Features
* VDS=60V; ID=45A RDS(ON.
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