z VDS=30 V z ID=4A z Low on-state resistance RDS (on) <65mΩ (VGS=10V，ID=2.0A) RDS (on) < 80mΩ (VGS=4.5V，ID=2.0A) RDS (on) < 95mΩ (VGS=3.0V，ID=2.0A) z Lead Pb-free and .

The BF9035SNZ-M is a Single N-channel MOS Field Effect Transistor, which uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This is applied to electronic systems as a power switch. Features z VDS=30 V z ID=4A z Low on-.

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