BF9024SPD-M datasheet, diode equivalent, BYD

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Features and benefits

MOSFET z z z VDS (V) = -20V ID = -2.7A Low on-state resistance RDS (on) < 90mΩ . (VGS = -4.5V) RDS (on) < 120mΩ .(VGS = -2.5V) VF=0.42V K D 1 2 3 4 1,2 Anode; 3 Sour.

Application

8 7 6 5 Features MOSFET z z z VDS (V) = -20V ID = -2.7A Low on-state resistance RDS (on) < 90mΩ . (VGS = -4.5V) R.

Description

The BF9024SPD-M uses advanced trench technology to Provide excellent RDS (ON) and low gate charge. This device is suitable for used as a load switch or in PWM applications. 8 7 6 5 Features MOSFET z z z VDS (V) = -20V ID = -2.7A Low on-state res.

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