BLM8205B mosfet equivalent, n-channel enhancement mode power mosfet.
* VDS = 20V,ID = 6A Typ.RDS(ON) = 16mΩ @ VGS=4.5V Typ.RDS(ON) = 19mΩ @ VGS=2.5V
* High power and current handing capability
* Lead free product is acquired
The BLM8205B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application.
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