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BLM8205 - N-Channel Enhancement Mode Power MOSFET

Description

The BLM8205 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a Battery protection or in other Switching application.

Features

  • VDS = 19.5V,ID = 4A RDS(ON).

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Datasheet Details

Part number BLM8205
Manufacturer BELLING
File Size 327.90 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet BLM8205 Datasheet

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Full PDF Text Transcription

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Pb Free Product BLM8205 N-Channel Enhancement Mode Power MOSFET Description The BLM8205 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features ● VDS = 19.5V,ID = 4A RDS(ON) <37mΩ @ VGS=2.5V RDS(ON) < 27mΩ @ VGS=4.
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