BLM8811 - Dual N-Channel Power MOSFET

Features

2.5V drive.
Internal protection diode.
Common-drain type.

BELLING

Datasheet Details

Part number	BLM8811
Manufacturer	BELLING
File Size	391.33 KB
Description	Dual N-Channel Power MOSFET
Datasheet	BLM8811 Datasheet

📁 Similar Datasheet

BLM8AD22S-60ABG - LDMOS 2-stage integrated Doherty MMIC (Ampleon)
BLM8D1822S-50PB - LDMOS 2-stage integrated Doherty MMIC (Ampleon)
BLM8D1822S-50PBG - LDMOS 2-stage integrated Doherty MMIC (Ampleon)
BLM8G0710S-15PB - LDMOS 2-stage power MMIC (Ampleon)
BLM8G0710S-15PBG - LDMOS 2-stage power MMIC (Ampleon)
BLM8G0710S-30PB - LDMOS 2-stage power MMIC (Ampleon)
BLM8G0710S-30PBG - LDMOS 2-stage power MMIC (Ampleon)
BLM8G0710S-45AB - LDMOS 2-stage power MMIC (Ampleon)
BLM8G0710S-45ABG - LDMOS 2-stage power MMIC (Ampleon)
BLM8G0710S-60PB - LDMOS 2-stage power MMIC (Ampleon)

Other Datasheets by BELLING

BLM8205 - N-Channel Enhancement Mode Power MOSFET
BLM8205A - N-Channel Enhancement Mode Power MOSFET
BLM8205B - N-Channel Enhancement Mode Power MOSFET
BLM04N06 - 60V N-Channel Power MOSFET
BLM04N08 - 80V N-Channel Power MOSFET
BLM138K - N-Channel Enhancement Mode Power MOSFET
BLM2004NE - N-Channel Enhancement Mode Power MOSFET
BLM2006NE - N-Channel Enhancement Mode Power MOSFET

Full PDF Text Transcription

Click to expand full text

BLM8811 12V, 21A, 5.5mΩ, Dual N-Channel Power MOSFET Features  2.5V drive  Internal protection diode  Common-drain type Applications  Lithium-ion battery charging and discharging switch Specifications Absolute Maximum Ratings at Ta = 25C Parameter Source to Source Voltage Symbol VSSS Conditions Gate to Source Voltage VGSS Source Current (DC) Source Current (Pulse) IS ISP PW100s, duty cycle1% Total Dissipation Junction Temperature PT When mounted on ceramic substrate (5000mm20.8mm) Tj Storage Temperature Tstg Value 12 8 21 100 2.5 Unit V V A A W 150 - 55 to +150 C C Note: Stresses exceeding those listed in the Maximum Ratings table may damage the device.

Published: Feb 9, 2017 |