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HMC8412CHIPS - Low-Noise Amplifier

General Description

The HMC8412CHIPS is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT), low noise amplifier that operates from 0.4 GHz to 10 GHz.

Key Features

  • Low noise figure: 1.5 dB typical.
  • Single positive supply (self biased).
  • High gain: ≤15 dB typical.
  • High OIP3: 32 dBm typical.
  • VDD: 5 V at IDQ = 60 mA.
  • 50 Ω matched input and output.
  • Die size: 0.945 mm × 1.545 mm × 0.102 mm.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FEATURES ► Low noise figure: 1.5 dB typical ► Single positive supply (self biased) ► High gain: ≤15 dB typical ► High OIP3: 32 dBm typical ► VDD: 5 V at IDQ = 60 mA ► 50 Ω matched input and output ► Die size: 0.945 mm × 1.545 mm × 0.102 mm APPLICATIONS ► Test instrumentation ► Military and space ► Telecommunications infrastructure ► Software defined radios ► Electronic warfare ► Radar applications Data Sheet HMC8412CHIPS Low Noise Amplifier, 0.4 GHz to 10 GHz FUNCTIONAL BLOCK DIAGRAM Figure 1. GENERAL DESCRIPTION The HMC8412CHIPS is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT), low noise amplifier that operates from 0.4 GHz to 10 GHz.