HMC8412CHIPS Datasheet | Analog Devices

Features - Low noise figure: 1.5 d B typical - Single positive supply (self biased) - High gain: ≤15 d B typical - High OIP3: 32 d Bm typical - VDD: 5 V at IDQ = 60 m A - 50 Ω matched input and output - Die size: 0.945 mm × 1.545 mm × 0.102 mm APPLICATIONS - Test instrumentation - Military and space - Telemunications infrastructure - Software defined radios - Electronic warfare - Radar applications Data Sheet HMC8412CHIPS Low Noise Amplifier, 0.4 GHz to 10 GHz FUNCTIONAL BLOCK DIAGRAM Figure 1. GENERAL DESCRIPTION The HMC8412CHIPS is a gallium arsenide (Ga As), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (p HEMT), low noise amplifier that operates from 0.4 GHz to 10 GHz. The HMC8412CHIPS provides ≤15 d B of typical gain, ≤19 d Bm typical output power at 1 d B gain pression (OP1d B), and a typical output third-order intercept (OIP3) of 32 d Bm. The HMC8412CHIPS requires 60 m A from a 5 V supply on VDD. The HMC8412CHIPS also Features inputs and outputs (I/Os) that are internally matched to 50 Ω and facilitates integration into multichip modules (MCMs). In addition, the bias choke to the HMC8412CHIPS and the dc blocking capacitors on the RFIN and RFOUT pads are integrated, creating a small form factor solution. Rev. A DOCUMENT FEEDBACK TECHNICAL SUPPORT Information furnished by Analog Devices is believed to be accurate and reliable "as is". However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. Data Sheet TABLE OF CONTENTS Features ................................................................ 1 Applications........................................................... 1...