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HMC8400 - GaAs pHEMT MMIC Low Noise Amplifier

Description

The HMC8400 is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC).

The HMC8400 is a wideband low noise amplifier that operates between 2 GHz and 30 GHz.

Features

  • Output power for 1 dB compression (P1dB): 14.5 dBm typical Saturated output power (PSAT): 17 dBm typical Gain: 13.5 dB typical Noise figure: 2 dB Output third-order intercept (IP3): 26.5 dBm typical Supply voltage: 5 V at 67 mA 50 Ω matched input/output Die size: 2.7 mm × 1.35 mm × 0.05 mm.

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Datasheet Details

Part number HMC8400
Manufacturer Analog Devices
File Size 305.21 KB
Description GaAs pHEMT MMIC Low Noise Amplifier
Datasheet download datasheet HMC8400 Datasheet
Additional preview pages of the HMC8400 datasheet.

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Full PDF Text Transcription

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Data Sheet 2 GHz to 30 GHz, GaAs pHEMT MMIC Low Noise Amplifier HMC8400 FEATURES Output power for 1 dB compression (P1dB): 14.5 dBm typical Saturated output power (PSAT): 17 dBm typical Gain: 13.5 dB typical Noise figure: 2 dB Output third-order intercept (IP3): 26.5 dBm typical Supply voltage: 5 V at 67 mA 50 Ω matched input/output Die size: 2.7 mm × 1.35 mm × 0.05 mm APPLICATIONS Test instrumentation Microwave radios and very small aperture terminals (VSATs) Military and space Telecommunications infrastructure Fiber optics GENERAL DESCRIPTION The HMC8400 is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC). The HMC8400 is a wideband low noise amplifier that operates between 2 GHz and 30 GHz.
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