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HMC8412 - Low-Noise Amplifier

Description

The HMC8412 is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT), low noise wideband amplifier that operates from 0.4 GHz to 11 GHz.

Features

  • Low noise figure: 1.4 dB typical.
  • Single positive supply (self biased).
  • High gain: ≤15.5 dB typical.
  • High OIP3: ≤33 dBm typical.
  • RoHS compliant, 2 mm × 2 mm, 6-lead LFCSP.

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Datasheet Details

Part number HMC8412
Manufacturer Analog Devices
File Size 1.16 MB
Description Low-Noise Amplifier
Datasheet download datasheet HMC8412 Datasheet
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Full PDF Text Transcription

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FEATURES ► Low noise figure: 1.4 dB typical ► Single positive supply (self biased) ► High gain: ≤15.5 dB typical ► High OIP3: ≤33 dBm typical ► RoHS compliant, 2 mm × 2 mm, 6-lead LFCSP APPLICATIONS ► Test instrumentation ► Telecommunications ► Military radar and communication ► Electronic warfare ► Aerospace Data Sheet HMC8412 Low Noise Amplifier, 0.4 GHz to 11 GHz FUNCTIONAL BLOCK DIAGRAM Figure 1. GENERAL DESCRIPTION The HMC8412 is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT), low noise wideband amplifier that operates from 0.4 GHz to 11 GHz. The HMC8412 provides a typical gain of 15.5 dB, a 1.
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