Download the CLF1G0035S-200P datasheet PDF.
This datasheet also covers the CLF1G0035-200P variant, as both devices belong to the same broadband rf power gan hemt family and are provided as variant models within a single manufacturer datasheet.
General Description
The CLF1G0035-200P and CLF1G0035S-200P are 200 W general purpose broadband GaN HEMTs usable from DC to 3.5 GHz.
Table 1.
CW and pulsed RF application information Typical RF performance at Tcase = 25 C; IDq = 300 mA; VDS = 50 V in a class-AB broadband demo board.
Full PDF Text Transcription for CLF1G0035S-200P (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
CLF1G0035S-200P. For precise diagrams, and layout, please refer to the original PDF.
CLF1G0035-200P; CLF1G0035S-200P Broadband RF power GaN HEMT Rev. 1 — 22 April 2016 Product data sheet 1. Product profile 1.1 General description The CLF1G0035-200P and CL...
View more extracted text
t 1. Product profile 1.1 General description The CLF1G0035-200P and CLF1G0035S-200P are 200 W general purpose broadband GaN HEMTs usable from DC to 3.5 GHz. Table 1. CW and pulsed RF application information Typical RF performance at Tcase = 25 C; IDq = 300 mA; VDS = 50 V in a class-AB broadband demo board. Test signal f PL Gp D (MHz) (W) (dB) (%) 1-Tone CW 1700 200 11 47 2000 200 10 52 2300 200 9 58 1-Tone pulsed [1] 1700 200 14 46 2000 200 14 48 2300 200 13 51 [1] Pulsed RF; tp = 100 s; = 10 %. Table 2. 2-Tone CW application information Typical 2-Tone performance at Tcase = 25 C; IDq = 600 mA; VDS = 50 V in a class-
CLF1G0035S-200P Datasheet
