CLF1G0035-200P - Broadband RF power GaN HEMT

Description

The CLF1G0035-200P and CLF1G0035S-200P are 200 W general purpose broadband GaN HEMTs usable from DC to 3.5 GHz.

Table 1.

CW and pulsed RF application information Typical RF performance at Tcase = 25 C; IDq = 300 mA; VDS = 50 V in a class-AB broadband demo board.

Features

Frequency of operatio.

Ampleon

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Datasheet Details

Part number	CLF1G0035-200P
Manufacturer	Ampleon
File Size	661.45 KB
Description	Broadband RF power GaN HEMT
Datasheet	CLF1G0035-200P Datasheet
Additional preview pages of the CLF1G0035-200P datasheet.

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CLF1G0035-200P; CLF1G0035S-200P Broadband RF power GaN HEMT Rev. 1 — 22 April 2016 Product data sheet 1. Product profile 1.1 General description The CLF1G0035-200P and CLF1G0035S-200P are 200 W general purpose broadband GaN HEMTs usable from DC to 3.5 GHz. Table 1. CW and pulsed RF application information Typical RF performance at Tcase = 25 C; IDq = 300 mA; VDS = 50 V in a class-AB broadband demo board. Test signal f PL Gp D (MHz) (W) (dB) (%) 1-Tone CW 1700 200 11 47 2000 200 10 52 2300 200 9 58 1-Tone pulsed [1] 1700 200 14 46 2000 200 14 48 2300 200 13 51 [1] Pulsed RF; tp = 100 s;  = 10 %. Table 2. 2-Tone CW application information Typical 2-Tone performance at Tcase = 25 C; IDq = 600 mA; VDS = 50 V in a class-AB broadband demo board.

Published: Apr 26, 2018 |