logo

BLF8G24LS-200PN Datasheet, Ampleon

BLF8G24LS-200PN transistor equivalent, power ldmos transistor.

BLF8G24LS-200PN Avg. rating / M : 1.0 rating-11

datasheet Download (Size : 356.70KB)

BLF8G24LS-200PN Datasheet
BLF8G24LS-200PN
Avg. rating / M : 1.0 rating-11

datasheet Download (Size : 356.70KB)

BLF8G24LS-200PN Datasheet

Features and benefits


* Excellent ruggedness
* High efficiency
* Low thermal resistance providing excellent thermal stability
* Designed for broadband operation (2300 MHz to 24.

Application

at frequencies from 2300 MHz to 2400 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a com.

Description

200 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Test signal f IDq VDS .

Image gallery

BLF8G24LS-200PN Page 1 BLF8G24LS-200PN Page 2 BLF8G24LS-200PN Page 3

TAGS

BLF8G24LS-200PN
Power
LDMOS
transistor
Ampleon

Manufacturer


Ampleon

Related datasheet

BLF8G24LS-100GV

BLF8G24LS-100V

BLF8G24LS-150GV

BLF8G24LS-150V

BLF8G20LS-160V

BLF8G20LS-220

BLF8G20LS-230V

BLF8G20LS-400PGV

BLF8G20LS-400PV

BLF8G22LS-140

BLF8G22LS-160BV

BLF8G22LS-200GV

BLF8G22LS-200V

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts