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BLF8G24LS-150GV - Power LDMOS transistor

Download the BLF8G24LS-150GV datasheet PDF. This datasheet also covers the BLF8G24LS-150V variant, as both devices belong to the same power ldmos transistor family and are provided as variant models within a single manufacturer datasheet.

Description

150 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2300 MHz to 2400 MHz.

Table 1.

Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.

Features

  • Excellent ruggedness.
  • High efficiency.
  • Low thermal resistance providing excellent thermal stability.
  • Decoupling leads to enable improved video bandwidth (70 MHz typical).
  • Lower output capacitance for improved performance in Doherty.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (BLF8G24LS-150V-Ampleon.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number BLF8G24LS-150GV
Manufacturer Ampleon
File Size 449.76 KB
Description Power LDMOS transistor
Datasheet download datasheet BLF8G24LS-150GV Datasheet

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Other Datasheets by Ampleon

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Full PDF Text Transcription

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BLF8G24LS-150V; BLF8G24LS-150GV Power LDMOS transistor Rev. 4 — 1 September 2015 Product data sheet 1. Product profile 1.1 General description 150 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2300 MHz to 2400 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Test signal f IDq VDS PL(AV) Gp D ACPR5M (MHz) (mA) (V) (W) (dB) (%) (dBc) 2-carrier W-CDMA 2300 to 2400 1300 28 45 19 33 30 [1] [1] 3GPP test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF; carrier spacing 5 MHz. Channel bandwidth is 3.84 MHz. 1.
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