Click to expand full text
BLF8G24LS-100V; BLF8G24LS-100GV
Power LDMOS transistor
Rev. 4 — 1 September 2015
Product data sheet
1. Product profile
1.1 General description
100 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2300 MHz to 2400 MHz.
Table 1. Typical performance
Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.
Test signal
f
IDq
VDS PL(AV) Gp
D ACPR5M
(MHz)
(mA) (V) (W)
(dB) (%) (dBc)
2-carrier W-CDMA
2300 to 2400
900 28 25
19 32 29 [1]
[1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF per carrier; 5 MHz carrier spacing.
1.
BLF8G24LS-100V Datasheet
