Download the BLF7G24LS-160P datasheet PDF.
This datasheet also covers the BLF7G24L-160P variant, as both devices belong to the same power ldmos transistor family and are provided as variant models within a single manufacturer datasheet.
General Description
160 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz.
Table 1.
Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.
Key Features
Excellent ruggedness.
High efficiency.
Low Rth providing excellent thermal stability.
Designed for broadband operation (2300 MHz to 2400 MHz).
Lower output capacitance for improved performance in Doherty.
Full PDF Text Transcription for BLF7G24LS-160P (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
BLF7G24LS-160P. For precise diagrams, and layout, please refer to the original PDF.
BLF7G24L-160P; BLF7G24LS-160P Power LDMOS transistor Rev. 6 — 1 September 2015 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor ...
View more extracted text
Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Test signal f IDq VDS PL(AV) Gp D ACPR885k (MHz) (mA) (V) (W) (dB) (%) (dBc) IS-95 2300 to 2400 1200 28 30 18.5 27.5 45.5[1] [1] Single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9.7 dB at 0.01 % probability on the CCDF. Channel bandwidth is 1.2288 MHz. 1.
BLF7G24LS-160P Datasheet
