Download the BLF7G24LS-100 datasheet PDF.
This datasheet also covers the BLF7G24L-100 variant, as both devices belong to the same power ldmos transistor family and are provided as variant models within a single manufacturer datasheet.
General Description
100 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz.
Table 1.
Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.
Full PDF Text Transcription for BLF7G24LS-100 (Reference)
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BLF7G24LS-100. For precise diagrams, and layout, please refer to the original PDF.
BLF7G24L-100; BLF7G24LS-100 Power LDMOS transistor Rev. 5 — 1 September 2015 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor fo...
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roduct profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f IDq VDS PL(AV) Gp D ACPR885k ACPR5M (MHz) (mA) (V) (W) (dB) (%) (dBc) (dBc) IS-95 2300 to 2400 900 28 20 18 27 46[1] - 1 carrier W-CDMA 2300 to 2400 900 28 30 18.7 33 - 40[2] [1] Single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9.7 dB at 0.01 % probability on the CCDF. Channel bandwidth is 1.2288
BLF7G24LS-100 Datasheet
