BLC9G22LS-160VT - Power LDMOS transistor

160 W LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2200 MHz.

Table 1.

Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB demo application.

• Excellent ruggedness.
• Excellent video-bandwidth enabling full band operation.
• High efficiency.
• Low thermal resistance providing excellent thermal stability.
• Designed for low memory effects providing excellent pre-distortability.
• Internally matched for ease of use.
• Integrated ESD protection.
• Compliant to Directive 2002/95/EC, regarding Restric.