Datasheet Details
| Part number | BLA9G1011L-300 |
|---|---|
| Manufacturer | Ampleon |
| File Size | 807.73 KB |
| Description | Power LDMOS transistor |
| Datasheet |
 BLA9G1011L-300 Datasheet
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General Description
300 W LDMOS power transistor for avionics applications at frequencies from 1030 MHz to 1090 MHz.
Table 1.
Typical information Typical RF performance at Tcase = 25 C; tp = 50 s; = 2 %; IDq = 100 mA; in a class-AB demo test circuit.
Key Features
- Easy power control.
- Integrated dual sided ESD protection enables excellent off-state isolation.
- Enhanced ruggedness.
- High efficiency.
- Excellent thermal stability.
- Designed for broadband operation (1030 MHz to 1090 MHz).
- Internally matched for ease of use.
- Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3.