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BLA9G1011L-300G Datasheet, Ampleon

BLA9G1011L-300G transistor equivalent, power ldmos transistor.

BLA9G1011L-300G Avg. rating / M : 1.0 rating-12

datasheet Download (Size : 807.73KB)

BLA9G1011L-300G Datasheet
BLA9G1011L-300G
Avg. rating / M : 1.0 rating-12

datasheet Download (Size : 807.73KB)

BLA9G1011L-300G Datasheet

Features and benefits


* Easy power control
* Integrated dual sided ESD protection enables excellent off-state isolation
* Enhanced ruggedness
* High efficiency
* Excellent .

Application

at frequencies from 1030 MHz to 1090 MHz. Table 1. Typical information Typical RF performance at Tcase = 25 C; tp = 50.

Description

300 W LDMOS power transistor for avionics applications at frequencies from 1030 MHz to 1090 MHz. Table 1. Typical information Typical RF performance at Tcase = 25 C; tp = 50 s;  = 2 %; IDq = 100 mA; in a class-AB demo test circuit. Test signal .

Image gallery

BLA9G1011L-300G Page 1 BLA9G1011L-300G Page 2 BLA9G1011L-300G Page 3

TAGS

BLA9G1011L-300G
Power
LDMOS
transistor
Ampleon

Manufacturer


Ampleon

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